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Si4396DY
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
FEATURES
V DS (V)
30
R DS(on) ( Ω )
0.0115 at V GS = 10 V
0.016 at V GS = 4.5 V
I D (A) a
16
12.7
Q g (Typ.)
13.3 nC
? Halogen-free According to IEC 61249-2-21
Available
? TrenchFET ? Power MOSFET
? 100 % R g and UIS Tested
SCHOTTKY AND BODY DIODE PRODUCT
SUMMARY
APPLICATIONS
V DS (V)
30
V SD (V)
Diode Forward Voltage
0.4 at 2 A
I S (A)
5 a
? Notebook Logic DC/DC
- Low Side
SO-8
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
D
D
G
Top V ie w
N -Channel MOSFET
Orderin g Information: Si4396DY-T1-E3 (Lead (P b )-free)
Si4396DY -T1-GE3 (Lead (P b )-free and Halogen-free)
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
S
Schottky Diode
Parameter
Drain-Source Voltage
Gate-Source Voltage
T C = 25 °C
Symbol
V DS
V GS
Limit
30
± 20
16
Unit
V
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
12.7
12.3 b, c
Pulsed Drain Current
Continuous Source-Drain Diode Current
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
T A = 70 °C
T C = 25 °C
T A = 25 °C
L = 0.1 mH
I DM
I S
I AS
E AS
9.7 b, c
40
5
2. 8 b, c
20
20
A
mJ
T C = 25 °C
5.4
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
3.4
3.1 b, c
W
T A = 70 °C
2.0 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Foot (Drain)
t ≤ 10 s
Steady State
R thJA
R thJF
34
17
40
23
°C/W
Notes:
a. Based on T C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 8 5 °C/W.
Document Number: 74252
S09-0392-Rev. B, 09-Mar-09
www.vishay.com
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